Statistics
Publications
5
Citations
209
H-Index
5
Active since
1965
Affiliations
H. Tobler is an author at Daimler (Germany) specializing in applied physics, engineering, and electrical engineering.
Publications per year
1965–2004
5
5
AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density
R. Behtash, H. Tobler, Martin Neuburger et al. · Electronics Letters · 2003 · 62 citations
Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band
R. Behtash, H. Tobler, F.-J. Berlec et al. · 2004 · 20 citations
Wide-bandgap Semiconductor, Electrical Engineering, Cw Output Power +11
Electrical and mechanical properties of an improved microwave Stark cell
H. Tobler, H U Wenger, A. Bauder et al. · Journal of Scientific Instruments · 1965 · 10 citations
MBE grown AlGaN/GaN MODFETs with high breakdown voltage
Andrei Vescan, R. Dietrich, A. Wieszt et al. · Journal of Crystal Growth · 1999 · 10 citations
Electrical Engineering, Engineering, Aluminum Gallium Nitride +3
1–5 of 5