A. Wieszt

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Small signal and power measurements of AlGaN/GaNHEMTwith SiN passivation

Jong‐Soo Lee, Andrei Vescan, A. Wieszt et al. · Electronics Letters · 2001 · 46 citations

Current limitation after pinch-off in AlGaN/GaN FETs

R. Dietrich, A. Wieszt, Andrei Vescan et al. · MRS Internet Journal of Nitride Semiconductor Research · 2000 · 22 citations · Full text

AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20 GHz

Andrei Vescan, R. Dietrich, A. Wieszt et al. · Electronics Letters · 2000 · 16 citations

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

R. Dietrich, Andrei Vescan, A. Wieszt et al. · physica status solidi (a) · 1999 · 12 citations

Activation Energy, Piezoelectric Algan/gan Fets, Electrical Engineering +13