I. Daumiller

Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

I. Daumiller, C. Kirchner, M. Kamp et al. · IEEE Electron Device Letters · 1999 · 179 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 138 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

Large signal frequency dispersion of AlGaN/GaNheterostructure fieldeffect transistors

E. Kohn, I. Daumiller, P. Schmid et al. · Electronics Letters · 1999 · 128 citations