Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

I. Daumiller, C. Kirchner, M. Kamp, +2

IEEE Electron Device Letters

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière, +10

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics +12

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing, +6

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringField-effect TransistorsSemiconductor DeviceSemiconductors +14

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing, +15

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsMovpe GrowthGan Power Device

Large signal frequency dispersion of AlGaN/GaNheterostructure fieldeffect transistors

E. Kohn, I. Daumiller, P. Schmid, +2

Electronics Letters

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +9

High temperature, high voltage operation of diamond Schottky diode

Andrei Vescan, I. Daumiller, P. Gluche, +2

Diamond and Related Materials

Diamond-like CarbonElectrical EngineeringEngineeringApplied PhysicsHigh Temperature

Very high temperature operation of diamond Schottky diode

Andrei Vescan, I. Daumiller, P. Gluche, +2

IEEE Electron Device Letters

Diode StructureDiamond-like CarbonElectrical EngineeringSemiconductor DeviceEngineering +11

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze, +7

IEEE Transactions on Microwave Theory and Techniques

Wide-bandgap SemiconductorElectronic TransientsElectrical EngineeringCharge InstabilitiesEngineering +11

P-Channel InGaN-HFET Structure Based on Polarization Doping

Tom Zimmermann, Martin Neuburger, M. Kunze, +5

IEEE Electron Device Letters

SemiconductorsPolarization DopingElectrical EngineeringElectronic DevicesEngineering +12