F. Schulze

Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

A. Dadgar, F. Schulze, M. Wienecke et al. · New Journal of Physics · 2007 · 138 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 138 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

MOVPE growth of GaN on Si – Substrates and strain

A. Dadgar, Peter Veit, F. Schulze et al. · Thin Solid Films · 2006 · 87 citations

Materials Science, Semiconductors, Electrical Engineering +6

Sustainability standards for bioenergy

Uwe R. Fritsche, Katja Huenecke, Artur Hermann et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 2006 · 85 citations

Circular Bioeconomy, Engineering, Bioenergy +13

Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001)

F. Schulze, A. Dadgar, J. Bläsing et al. · Applied Physics Letters · 2004 · 47 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16