Electronics Letters · 1999 · 128 citations · 2 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingField-effect TransistorsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesWide-bandgap Semiconductor DevicesEquivalent Circuit AnalysisEquivalent Circuit ModelingFrequency DispersionHeterostructure Field-effect TransistorsHeterostructure TransistorsMicrowave DevicesMicrowave TransistorsRadio-frequency Power Devices
Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors Microwave AlGaN/GaN MODFET power devices have been analysed with respect to their frequency dispersion in terms of transconductance, gate capacitance and large signal output current swing. A electrical equivalent circuit model consistent with all experimental findings, based on the incorporation of a lossy dielectric layer, is presented. It may also enable an interpretation to be made of the RF power compression observed in these devices.
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High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations