Christophe Gaquière

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Farid Medjdoub, J.‐F. Carlin, M. Gonschorek et al. · 2006 · 176 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 157 citations · Full text

Wide-bandgap Semiconductor, Thz Photonics, Terahertz Technology +16

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 150 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Stability +8

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova, A. El Fatimy, J. Lusakowskil et al. · Applied Physics Letters · 2006 · 135 citations

Electrical Engineering, Terahertz Technology, Terahertz Spectroscopy +13