Applied Physics Letters · 2006 · 135 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsTerahertz PhotonicsWide Band Gap SemiconductorsHigh-electron-mobility TransistorsNanoscale TransistorsSpontaneous EmissionTerahertz GenerationTerahertz NanoelectronicsTerahertz Semiconductor DevicesTerahertz WavesThreshold Voltage
Room-temperature generation of terahertz radiation in nanometer gate length InAlAs∕InGaAs and AlGaN∕GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1μW.
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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
W. Knap, J. Lusakowski, T. Parenty et al. · Applied Physics Letters · 2004 · 347 citations