M. A. Poisson

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 157 citations · Full text

Wide-bandgap Semiconductor, Thz Photonics, Terahertz Technology +16

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova, A. El Fatimy, J. Lusakowskil et al. · Applied Physics Letters · 2006 · 135 citations

Electrical Engineering, Terahertz Technology, Terahertz Spectroscopy +13

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

W. Chikhaoui, Jean‐Marie Bluet, M. A. Poisson et al. · Applied Physics Letters · 2010 · 84 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

The structure of InAlN/GaN heterostructures for high electron mobility transistors

Arantxa Vilalta‐Clemente, M. A. Poisson, H. Behmenburg et al. · physica status solidi (a) · 2010 · 21 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Raman characterization of Mg⁺ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant et al. · Journal of Physics Condensed Matter · 2003 · 18 citations