J.C. Pesant

Shallow donors and <i>D</i>-<i>X</i> centers neutralization by atomic hydrogen in GaAlAs doped with silicon

R. Mostefaoui, J. Chevallier, Abdul Jalil et al. · Journal of Applied Physics · 1988 · 58 citations

Engineering, Silicon On Insulator, Semiconductor Nanostructures +16

Hydrogen passivation of shallow acceptors in p-type InP

J. Chevallier, Abdul Jalil, B. Theys et al. · Semiconductor Science and Technology · 1989 · 51 citations

Engineering, Proton-coupled Electron Transfer, Deuterium Diffusion +16

Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

Guilhem Larrieu, Emmanuel Dubois, Romain Valentin et al. · 2007 · 46 citations

Thin-body Soi P-mosfets, Electrical Engineering, Engineering +14

Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering

Minh-Tri Ta, D. Briand, Y. Guhel et al. · Thin Solid Films · 2008 · 45 citations

Materials Science, Structural Characterization, Epitaxial Growth +8

Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

B. Boudart, S. Trassaert, X. Wallart et al. · Journal of Electronic Materials · 2000 · 42 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +6