J.C. Pesant - Concepedia

Author

J.C. Pesant

Centre National de la Recherche Scientifique

Also Known As

J C Pesant, J-C Pesant, J. C. PESANT, J. C. Pesant, J.-C. Pesant, J.C Pesant, J.C. Pesant, J.‐C. Pesant, Jean Claude Pesant, Pesant, J. C.

Publications

542

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Institut d'électronique de microélectronique et de nanotechnologie Laboratoire Universitaire des Sciences Appliquées de Cherbourg Laboratoire de physique des Solides Université de Caen Normandie

About

J.C. Pesant is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	435
2	Applied Physics	12	12	398
3	Chemistry	4	4	133
4	Natural Sciences	3	3	108
5	Chemical Engineering	1	1	16

J.C. Pesant

Publications

473

Citations

H-Index

Page 1

	Year	Citations
Shallow donors and <i>D</i>-<i>X</i> centers neutralization by atomic hydrogen in GaAlAs doped with silicon R. Mostefaoui, J. Chevallier, Abdul Jalil, Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor NanostructuresSemiconductorsElectronic Devices	1988	58
Hydrogen passivation of shallow acceptors in p-type InP J. Chevallier, Abdul Jalil, B. Theys, Semiconductor Science and Technology EngineeringProton-coupled Electron TransferDeuterium DiffusionChemistryDeuterium Plasma	1989	51
Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs Guilhem Larrieu, Emmanuel Dubois, Romain Valentin, Thin-body Soi P-mosfetsElectrical EngineeringEngineeringRf SemiconductorPhysics	2007	46
Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering Minh-Tri Ta, D. Briand, Y. Guhel, Thin Solid Films Materials ScienceStructural CharacterizationEpitaxial GrowthEngineeringOxide Electronics	2008	45
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN B. Boudart, S. Trassaert, X. Wallart, Journal of Electronic Materials Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	2000	42
Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenated <i>n</i>-type GaAs doped with silicon Abdul Jalil, J. Chevallier, J.C. Pesant, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesChemistrySemiconductors	1987	41
Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si) E. Constant, N. Caglio, J. Chevallier, Electronics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringField-effect Transistors	1987	40
Electrochemical behaviour and photo-excitability of titanium oxides layer formed under low anodic polarisation conditions J.C. Pesant, P. Vennereau Journal of Electroanalytical Chemistry Materials ScienceEngineeringElectrochemical BehaviourPhotochemistryInorganic Photochemistry	1980	25
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology M. Werquin, N. Vellas, Y. Guhel, Microwave and Optical Technology Letters	2005	20
Raman characterization before and after rapid thermal annealing of CeO<sub>2</sub> thin films grown by rf sputtering on (111) Si Y. Guhel, Minh-Tri Ta, J. Bernard, Journal of Raman Spectroscopy Materials ScienceSemiconductorsCeo 2Crystalline QualityEngineering	2008	19

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