2007 · 46 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsChannel DopingDopant ActivationDopant ImplantationDopant IncorporationDopant SegregationHigh-frequency ElectronicsHigh-temperature Device OperationSilicide Contacts
This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-to-silicide and low temperature activation (500degC). The integration of platinum silicide coupled to boron segregation demonstrates a 50% enhancement of the current drive over the dopant-free approach. RF characterization unveils a cut-off frequency f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 180 GHz at L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> =30 nm without application of channel stressors.
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A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications
I. Post, M.S. Akbar, G. Curello et al. · 2006 · 58 citations