Emmanuel Dubois

Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

Guilhem Larrieu, Emmanuel Dubois, Romain Valentin et al. · 2007 · 46 citations

Thin-body Soi P-mosfets, Electrical Engineering, Engineering +14

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

Guilhem Larrieu, D.A. Yarekha, Emmanuel Dubois et al. · IEEE Electron Device Letters · 2009 · 46 citations · Full text

Engineering, N-type Sb-mosfet, Optoelectronic Devices +18

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Vikram Passi, Florent Ravaux, Emmanuel Dubois et al. · IEEE Electron Device Letters · 2011 · 31 citations · Full text

Nanosensors, Engineering, Nanodevices +26

CMOS Inverter Based on Schottky Source–Drain MOS Technology With Low-Temperature Dopant Segregation

Guilhem Larrieu, Emmanuel Dubois · IEEE Electron Device Letters · 2011 · 29 citations · Full text

Low-power Electronics, Semiconductor Technology, Electrical Engineering +13

Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

Guilhem Larrieu, Emmanuel Dubois, D. Yarekha et al. · Materials Science and Engineering B · 2008 · 11 citations · Full text

Electrical Engineering, Schottky Barrier Height, Engineering +6