The structure of InAlN/GaN heterostructures for high electron mobility transistors

Abstract

Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interlayer thickness is increased, the growth mode becomes three‐dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope.