Heterostructures

Heterostructure is a semiconductor structure composed of distinct materials with differing electronic properties, distinguished by the presence of engineered interfaces between layers of dissimilar band gaps that enable precise control over charge carrier behavior.

13.9K

Publications

778.8K

Citations

46.7K

Authors

Institutions

Publications per year

2017–2026

6.2K

Variants

Heterostructure

Parents

Chalcogenide GlassesCompound SemiconductorsIi-vi SemiconductorsIii-v SemiconductorsOptoelectronic MaterialsQuantum ConfinementWide Band Gap SemiconductorsWide-bandgap Semiconductors

Publications

13.9K

Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures

Roman M. Lutchyn, Jay D. Sau, S. Das Sarma · Physical Review Letters · 2010 · 3.5K citations · Full text

Natural Sciences, Physics, Condensed Matter Physics +16

One-Dimensional Electrical Contact to a Two-Dimensional Material

Lei Wang, Inanc Meric, Pinshane Y. Huang et al. · Science · 2013 · 3K citations

Natural Sciences, Materials Engineering, Materials Science +17

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

New directions in the pursuit of Majorana fermions in solid state systems

Reports on Progress in Physics · 2012 · 2.8K citations · Full text

Natural Sciences, Materials Science, Physics +17

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

L. Britnell, Roman Gorbachev, R. Jalil et al. · Science · 2012 · 2.6K citations · Full text

Engineering, Electrical Engineering, Physics +17

1–5 of 13.9K

Authors

46.7K

KW
Kenji Watanabe
National Institute for Materials Science, Japan
155 publications · 17.5K citations
55
h-index
TT
Takashi Taniguchi
National Institute for Materials Science, Japan
152 publications · 14.4K citations
53
h-index
JL
Jingbo Li
Institute of Semiconductors, China
53 publications · 6.1K citations
33
h-index
OA
O. Ambacher
Fraunhofer Institute for Applied Solid State Physics, Germany
49 publications · 7.8K citations
28
h-index
ZW
Zhongming Wei
Institute of Semiconductors, China
37 publications · 2.7K citations
27
h-index

1–5 of 46.7K

Institutions

1–8 of 4K

Venues

Applied Physics Letters
1.5K publications · 78K citations
118
h-index
Nano Letters
323 publications · 35.4K citations
98
h-index
ACS Nano
271 publications · 26.9K citations
88
h-index
Journal of Applied Physics
771 publications · 39.3K citations
82
h-index
Nature Communications
182 publications · 24.2K citations
81
h-index

1–5