H. Behmenburg

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

E. Sakalauskas, H. Behmenburg, Christoph Hums et al. · Journal of Physics D Applied Physics · 2010 · 75 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

F. Lecourt, Alain Agboton, N. Ketteniss et al. · IEEE Electron Device Letters · 2013 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg et al. · IEEE Electron Device Letters · 2011 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Dislocation density assessment via X‐ray GaN rocking curve scans

Ian D. Booker, L. Rahimzadeh Khoshroo, J. Woitok et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2010 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +17