H. Behmenburg

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

E. Sakalauskas, H. Behmenburg, Christoph Hums et al. · Journal of Physics D Applied Physics · 2010 · 75 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +18

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

F. Lecourt, Alain Agboton, N. Ketteniss et al. · IEEE Electron Device Letters · 2013 · 42 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg et al. · IEEE Electron Device Letters · 2011 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 32 citations

Wide-bandgap Semiconductor, Engineering, Dynamic Properties +16

Dislocation density assessment via X‐ray GaN rocking curve scans

Ian D. Booker, L. Rahimzadeh Khoshroo, J. Woitok et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2010 · 31 citations

Materials Science, Dislocation Densities, Engineering +15