Hady Yacoub

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Hady Yacoub, Dirk Fahle, Matthias Finken et al. · Semiconductor Science and Technology · 2014 · 65 citations

Wide-bandgap Semiconductor, Electrical Engineering, Aluminum Nitride +14

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

Hady Yacoub, C. Mauder, Stefano Leone et al. · IEEE Transactions on Electron Devices · 2017 · 37 citations

Wide-bandgap Semiconductor, Dynamic Properties, Electrical Engineering +14

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 32 citations

Wide-bandgap Semiconductor, Engineering, Dynamic Properties +16

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Sven Besendörfer, Thorsten Zweipfennig, Hady Yacoub et al. · AIP Advances · 2020 · 23 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +12

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Hady Yacoub, Dirk Fahle, M. Eickelkamp et al. · Journal of Applied Physics · 2016 · 20 citations

Stress Voltage, Electrical Engineering, Dislocation Density +12