Dirk Fahle

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Xiangdong Li, Karen Geens, Weiming Guo et al. · IEEE Electron Device Letters · 2019 · 74 citations

Engineering, Electrical Engineering, Materials Science +16

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Hady Yacoub, Dirk Fahle, Matthias Finken et al. · Semiconductor Science and Technology · 2014 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

Hady Yacoub, C. Mauder, Stefano Leone et al. · IEEE Transactions on Electron Devices · 2017 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

Lars Heuken, M. Kortemeyer, Alessandro Ottaviani et al. · IEEE Transactions on Electron Devices · 2020 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 33 citations

Engineering, Materials Engineering, Materials Science +17