Concepedia

Author

Xiangdong Li

IMECORCID

Also Known As

Jie Zhang, Li Xiang-Dong, Li, Xiang-Dong, Li, Xiangdong, Xiang-Dong Li, XiangDong Li, Xiangdong Li, Xiru Li

95

Publications

1.2K

Citations

19

H-Index

40

Concepts

All Affiliations

IMECXidian UniversityKU LeuvenGhent UniversityOkmetic (Finland)
XL

About

Xiangdong Li is an author at IMEC specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

16

20

789

2

Applied Physics

16

20

789

3

Electrical Engineering

16

18

737

4

Natural Sciences

2

2

52

5

Computer Engineering

1

1

14

Xiangdong Li

×

28

Publications

984

Citations

19

H-Index

YearCitations

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Xiangdong Li, M. Van Hove, Ming Zhao,

IEEE Electron Device Letters

2017

150

Observation of Dynamic <i>V</i> <sub>TH</sub> of p-GaN Gate HEMTs by Fast Sweeping Characterization

Xiangdong Li, Benoit Bakeroot, Zhicheng Wu,

IEEE Electron Device Letters

2020

76

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Xiangdong Li, Karen Geens, Weiming Guo,

IEEE Electron Device Letters

2019

71

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Xiangdong Li, M. Van Hove, Ming Zhao,

IEEE Electron Device Letters

2018

68

Silole‐Infiltrated Photonic Crystal Films as Effective Fluorescence Sensor for Fe<sup>3+</sup> and Hg<sup>2+</sup>

Yuqi Zhang, Xiangdong Li, Loujun Gao,

ChemPhysChem

2014

56

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Matteo Borga, Matteo Meneghini, Steve Stoffels,

IEEE Transactions on Electron Devices

2018

48

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot,

IEEE Transactions on Power Electronics

2020

42

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

Xiangdong Li, M. Van Hove, Ming Zhao,

IEEE Transactions on Electron Devices

2018

40

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Yinhe Wu, Shuang Liu, Jincheng Zhang,

IEEE Transactions on Electron Devices

2023

40

Exchange energy shifts under dense plasma conditions

Xiangdong Li, Zhizhan Xu, F. B. Rosmej

Journal of Physics B Atomic Molecular and Optical Physics

2006

38

Page 1