Xiangdong Li

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Xiangdong Li, M. Van Hove, Ming Zhao et al. · IEEE Electron Device Letters · 2017 · 150 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

Observation of Dynamic <i>V</i> _TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

Xiangdong Li, Benoit Bakeroot, Zhicheng Wu et al. · IEEE Electron Device Letters · 2020 · 76 citations · Full text

Wide-bandgap Semiconductor, Gan Circuit, Electrical Engineering +13

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Xiangdong Li, Karen Geens, Weiming Guo et al. · IEEE Electron Device Letters · 2019 · 71 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +17

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Xiangdong Li, M. Van Hove, Ming Zhao et al. · IEEE Electron Device Letters · 2018 · 68 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Silole‐Infiltrated Photonic Crystal Films as Effective Fluorescence Sensor for Fe³⁺ and Hg²⁺

Yuqi Zhang, Xiangdong Li, Loujun Gao et al. · ChemPhysChem · 2014 · 56 citations