Benoit Bakeroot

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Tian‐Li Wu, Denis Marcon, Shuzhen You et al. · IEEE Electron Device Letters · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Silvia Lenci, Brice De Jaeger, L. Carbonell et al. · IEEE Electron Device Letters · 2013 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, F. Masin, Matteo Meneghini et al. · IEEE Transactions on Electron Devices · 2018 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Benoit Bakeroot, A. Stockman, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2017 · 111 citations

Engineering, Electrical Engineering, Materials Science +17