Niels Posthuma

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Tian‐Li Wu, Denis Marcon, Shuzhen You et al. · IEEE Electron Device Letters · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 173 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Benoit Bakeroot, A. Stockman, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2017 · 111 citations

Engineering, Electrical Engineering, Materials Science +17

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 110 citations

Engineering, Electrical Engineering, Materials Science +13