Andrea Natale Tallarico

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 163 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2017 · 97 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu et al. · 2017 · 65 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma et al. · IEEE Electron Device Letters · 2019 · 65 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2019 · 54 citations

Electrical Engineering, Gate Degradation, Engineering +11