Andrea Natale Tallarico

Author

University of Bologna ORCID

Also Known As

A. Gnudi, A. N. Tallarico, A.N. Tallarico, Andrea N. Tallarico, Andrea Natale Tallarico, Tallarico, Andrea Natale

Publications

944

Citations

H-Index

Concepts

All Affiliations

University of Bologna IMEC Ghent University University of Padua STMicroelectronics (Italy)

About

Andrea Natale Tallarico is an author at University of Bologna specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	20	842
2	Electrical Engineering	16	20	842
3	Applied Physics	15	19	820
4	Materials Engineering	2	2	99
5	Computer Engineering	1	1	34

Andrea Natale Tallarico

Publications

860

Citations

H-Index

Page 1

	Year	Citations
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2016	163
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringAl Content	2017	97
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2017	65
Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HemtsNanoelectronics	2019	65
Gate Reliability of p-GaN HEMT With Gate Metal Retraction Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, IEEE Transactions on Electron Devices Electrical EngineeringGate DegradationEngineeringBias Temperature InstabilityApplied Physics	2019	54
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination Jie Hu, Steve Stoffels, Silvia Lenci, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringAnode RecessEngineering	2016	43
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests Jie Hu, Steve Stoffels, Ming Zhao, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	2017	43
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Wide-bandgap SemiconductorElectrical EngineeringParasitic Sidewall TransistorEngineeringNanoelectronics	2019	42
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs M. Millesimo, C. Fiegna, Niels Posthuma, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringIsolation Region FailureNanoelectronicsBias Temperature Instability	2021	35
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, IEEE Journal of the Electron Devices Society EngineeringVlsi DesignSelective LocosPower ElectronicsSemiconductor Device	2018	34

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