Paolo Magnone

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 163 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

Paolo Magnone, Felice Crupi, Gino Giusi et al. · IEEE Transactions on Device and Materials Reliability · 2009 · 124 citations · Full text

Gate Stacks, Gate Dielectrics, Electrical Engineering +13

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2017 · 97 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Power-Based Droop Control in DC Microgrids Enabling Seamless Disconnection From Upstream Grids

Guangyuan Liu, Tommaso Caldognetto, Paolo Mattavelli et al. · IEEE Transactions on Power Electronics · 2018 · 65 citations · Full text

Distributed Energy System, Electrical Engineering, Engineering +14

Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

Felice Crupi, P. Srinivasan, Paolo Magnone et al. · IEEE Electron Device Letters · 2006 · 58 citations

Electrical Engineering, Engineering, Vlsi Design +15