Steve Stoffels

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Tian‐Li Wu, Denis Marcon, Shuzhen You et al. · IEEE Electron Device Letters · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

M. Van Hove, S. Boulay, S.R. Bahl et al. · IEEE Electron Device Letters · 2012 · 206 citations

Engineering, Computer Engineering, Electrical Engineering +17

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 173 citations

Engineering, Electrical Engineering, Materials Science +17

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Electron Device Letters · 2016 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Science +17