Shuzhen You

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Tian‐Li Wu, Denis Marcon, Shuzhen You et al. · IEEE Electron Device Letters · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Silvia Lenci, Brice De Jaeger, L. Carbonell et al. · IEEE Electron Device Letters · 2013 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 110 citations

Engineering, Electrical Engineering, Materials Science +13

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Niels Posthuma, Shuzhen You, H. Liang et al. · 2016 · 92 citations

Engineering, Electrical Engineering, Materials Engineering +17