IEEE Electron Device Letters · 2013 · 140 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride Power DevicesJunction Leakage CurrentLeakageLeakage Current ReductionMetallizationSchottky BarriersSchottky ContactsSilicon Wafers
High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and the same metallization is used for both, avoiding extra metal deposition dedicated to the Schottky junction. A gated edge termination allows obtaining low reverse leakage current (within 1 μA/mm at -600 V), which is several orders of magnitude lower than the one of conventional Schottky diodes processed on the same wafer. Recess is implemented at the anode, resulting in low diode turn-on voltage values.
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Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
Brice De Jaeger, M. Van Hove, D. Wellekens et al. · 2012 · 92 citations