Stefaan Decoutere

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.3K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Transient enhanced diffusion of boron in Si

Sachin Jain, Wim Schoenmaker, Richard Lindsay et al. · Journal of Applied Physics · 2002 · 233 citations

Engineering, Materials Engineering, Materials Science +17

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Tian‐Li Wu, Denis Marcon, Shuzhen You et al. · IEEE Electron Device Letters · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

M. Van Hove, S. Boulay, S.R. Bahl et al. · IEEE Electron Device Letters · 2012 · 206 citations

Engineering, Computer Engineering, Electrical Engineering +17

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 173 citations

Engineering, Electrical Engineering, Materials Science +17