CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

M. Van Hove, S. Boulay, S.R. Bahl, +6

IEEE Electron Device Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics +8

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Silvia Lenci, Brice De Jaeger, L. Carbonell, +6

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringGated Edge Termination +12

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels, +11

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringTrue E-mode Performance +9

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

Brice De Jaeger, M. Van Hove, D. Wellekens, +5

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +11

Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories

R. Degraeve, F. Schuler, B. Kaczer, +9

IEEE Transactions on Electron Devices

Non-volatile MemoryElectrical EngineeringEngineeringPhysicsData Retention +12

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Niels Posthuma, Shuzhen You, H. Liang, +5

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsMg Active Concentration +10

SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILC

J. De Blauwe, J. van Heudt, D. Wellekens, +2

IEEE Transactions on Electron Devices

Silc-related EffectsElectrical EngineeringSteady-state SilcEngineeringGate Injection Polarity +13

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Andrea Firrincieli, Brice De Jaeger, Shuzhen You, +3

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringSi PlatformEngineering +11

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

M. Van Hove, Xuanwu Kang, Steve Stoffels, +5

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorAluminium NitrideEngineeringSemiconductor MaterialsGate Dielectric +15

HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

Jan Van Houdt, L. Haspeslagh, D. Wellekens, +3

IEEE Transactions on Electron Devices

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureEmbedded Systems +16