Concepedia

Author

A. Stockman

ON Semiconductor (Belgium)ORCID

Also Known As

A. Stockman, Arno Stockman

31

Publications

631

Citations

14

H-Index

25

Concepts

All Affiliations

ON Semiconductor (Belgium)University of PaduaGhent UniversityIMECUniversity of Bristol
AS

About

A. Stockman is an author at ON Semiconductor (Belgium) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

12

12

525

2

Electrical Engineering

12

12

525

3

Applied Physics

11

11

513

4

Natural Sciences

1

1

17

5

Materials Engineering

1

1

12

A. Stockman

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16

Publications

594

Citations

14

H-Index

YearCitations

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Benoit Bakeroot, A. Stockman, Niels Posthuma,

IEEE Transactions on Electron Devices

2017

108

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, F. Masin, Matteo Meneghini,

IEEE Transactions on Electron Devices

2018

107

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Alaleh Tajalli,

2018

57

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Matteo Meneghini,

2019

54

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, Matteo Meneghini, E. Canato,

Applied Physics Letters

2019

45

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Matteo Meneghini,

IEEE Transactions on Device and Materials Reliability

2021

45

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

E. Canato, Matteo Meneghini, Carlo De Santi,

Microelectronics Reliability

2020

27

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

E. Canato, F. Masin, Matteo Borga,

2019

24

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, Alaleh Tajalli, Matteo Meneghini,

IEEE Transactions on Electron Devices

2018

21

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Alaleh Tajalli, E. Canato, A. Nardo,

Microelectronics Reliability

2018

19

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