A. Stockman

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Benoit Bakeroot, A. Stockman, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2017 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +9

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, F. Masin, Matteo Meneghini et al. · IEEE Transactions on Electron Devices · 2018 · 107 citations

Wide-bandgap Semiconductor, Electrical Engineering, P-gallium Nitride +13

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Alaleh Tajalli et al. · 2018 · 57 citations

Wide-bandgap Semiconductor, Electrical Engineering, Temperature Dependent Dc +10

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Matteo Meneghini et al. · 2019 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, Matteo Meneghini, E. Canato et al. · Applied Physics Letters · 2019 · 45 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13