Reliability and failure analysis in power GaN-HEMTs: An overview

Matteo Meneghini, Isabella Rossetto, Carlo De Santi, +8

ReliabilityElectrical EngineeringEngineeringPower DeviceApplied Physics +8

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Alaleh Tajalli, +5

Wide-bandgap SemiconductorElectrical EngineeringTemperature Dependent DcEngineeringP-gate Algan/gan Hemts +8

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Matteo Meneghini, +3

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsThreshold Voltage +6

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, Matteo Meneghini, E. Canato, +5

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPositive Temperature DependenceBias Temperature Instability +11

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

A. Stockman, E. Canato, Matteo Meneghini, +3

IEEE Transactions on Device and Materials Reliability

Wide-bandgap SemiconductorElectrical EngineeringThreshold Voltage StabilityEngineeringSemiconductor Device +8

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Matteo Meneghini, Isabella Rossetto, Matteo Borga, +9

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringDifferent Temperature Levels +11

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Isabella Rossetto, Matteo Meneghini, E. Canato, +7

Microelectronics Reliability

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringCurrent-driven DegradationEngineering +9

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

E. Canato, Matteo Meneghini, Carlo De Santi, +5

Microelectronics Reliability

Wide-bandgap SemiconductorElectrical EngineeringGate TrappingGan HemtsEngineering +4

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

E. Canato, F. Masin, Matteo Borga, +6

Threshold Voltage InstabilitiesWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +10

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, +7

Microelectronics Reliability