Concepedia

Author

F. Masin

University of PaduaORCID

Also Known As

F. Masin, Fabrizio Masin

15

Publications

281

Citations

8

H-Index

9

Concepts

All Affiliations

University of PaduaON Semiconductor (Belgium)Ghent University
FM

About

F. Masin is an author at University of Padua specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

6

6

239

2

Applied Physics

6

6

239

3

Electrical Engineering

6

6

239

4

Physics

5

5

194

5

Microelectronics

4

4

199

F. Masin

×

7

Publications

257

Citations

7

H-Index

YearCitations

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, F. Masin, Matteo Meneghini,

IEEE Transactions on Electron Devices

2018

107

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, Matteo Meneghini, E. Canato,

Applied Physics Letters

2019

45

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

E. Canato, Matteo Meneghini, Carlo De Santi,

Microelectronics Reliability

2020

27

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

E. Canato, F. Masin, Matteo Borga,

2019

24

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

F. Masin, Carlo De Santi, Jan Lettens,

Journal of Applied Physics

2021

23

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

E. Canato, Matteo Meneghini, A. Nardo,

Microelectronics Reliability

2019

18

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Nicola Modolo, Manuel Fregolent, F. Masin,

Microelectronics Reliability

2022

13

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