F. Masin

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman, F. Masin, Matteo Meneghini et al. · IEEE Transactions on Electron Devices · 2018 · 107 citations

Wide-bandgap Semiconductor, Electrical Engineering, P-gallium Nitride +13

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, Matteo Meneghini, E. Canato et al. · Applied Physics Letters · 2019 · 45 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

E. Canato, Matteo Meneghini, Carlo De Santi et al. · Microelectronics Reliability · 2020 · 27 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Gate Trapping +6

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

E. Canato, F. Masin, Matteo Borga et al. · 2019 · 24 citations

Threshold Voltage Instabilities, Wide-bandgap Semiconductor, Electrical Engineering +12

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

F. Masin, Carlo De Santi, Jan Lettens et al. · Journal of Applied Physics · 2021 · 23 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +12