The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam, +62

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +13

Reliability and failure analysis in power GaN-HEMTs: An overview

Matteo Meneghini, Isabella Rossetto, Carlo De Santi, +8

ReliabilityElectrical EngineeringEngineeringPower DeviceApplied Physics +8

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Matteo Borga, Matteo Meneghini, Isabella Rossetto, +7

IEEE Transactions on Electron Devices

Electrical EngineeringSemiconductor DeviceEngineeringTime-dependent Degradation ProcessApplied Physics +5

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Matteo Borga, Matteo Meneghini, Steve Stoffels, +6

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsGan Buffer +11

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, +13

Wide-bandgap SemiconductorElectrical EngineeringParasitic Sidewall TransistorEngineeringNanoelectronics +12

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Shun‐Wei Tang, Benoit Bakeroot, Zhen-Hong Huang, +8

IEEE Transactions on Electron Devices

SemiconductorsTrap-assisted TunnelingElectrical EngineeringWide-bandgap SemiconductorEngineering +10

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, Niels Posthuma, +4

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringIsolation Region FailureNanoelectronicsBias Temperature Instability +9

TCAD Modeling of the Dynamic <i>V</i> _TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Andrea Natale Tallarico, M. Millesimo, Benoit Bakeroot, +5

IEEE Transactions on Electron Devices

SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesTcad Modeling +12

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Matteo Meneghini, Isabella Rossetto, Matteo Borga, +9

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringDifferent Temperature Levels +11

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Elena Fabris, Matteo Meneghini, Carlo De Santi, +7

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringCharge TransportSemiconductor DevicePdrain Terminal +14