Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Abstract

This paper demonstrates and investigates the time-dependent vertical breakdown of GaN-on-Si power transistors. The study is based on electrical characterization, dc stress tests and electroluminescence measurements. We demonstrate the following original results: 1) when submitted to two-terminal (drain-to-substrate) stress, the AlGaN/GaN transistors show a time-dependent degradation process, which leads to the catastrophic failure of the devices; 2) time-to-failure follows a Weibull distribution and is exponentially dependent on stress voltage; 3) the degradation mechanism is strongly field dependent and weakly thermally activated, with an activation energy of 0.25 eV; and 4) emission microscopy suggests that vertical current flows under the whole drain area, possibly through extended defects. The catastrophic failure occurs at random positions under the drain contact. The time-dependent failure is ascribed to a percolation process activated by the high-electric field that leads to the generation of localized shunt paths between drain and substrate.