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OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

DOIFull Paper Access

27

Citations

23

References

2020

Year

E. Canato, Matteo Meneghini, Carlo De Santi, F. Masin, A. Stockman, P. Moens, Enrico Zanoni, Gaudenzio Meneghesso
Microelectronics Reliability

References

YearCitations

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