Alaleh Tajalli - Concepedia

Author

Alaleh Tajalli

University of Padua ORCID

Also Known As

A Tajalli, A. Tajalli, Alaleh Tajalli, Meneghini, M. (Matteo), Tajalli, A. (Alaleh)

Publications

570

Citations

H-Index

Concepts

All Affiliations

University of Padua ON Semiconductor (Belgium)Ghent University Centre National de la Recherche Scientifique Institut d'électronique de microélectronique et de nanotechnologie

About

Alaleh Tajalli is an author at University of Padua specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	483
2	Applied Physics	9	9	483
3	Electrical Engineering	9	9	483
4	Physics	4	4	57
5	Natural Sciences	1	1	17

Alaleh Tajalli

Publications

543

Citations

H-Index

Page 1

	Year	Citations
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli, IEEE Transactions on Electron Devices Dynamic On-resistanceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyHard Switching	2017	127
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs Matteo Meneghini, Alaleh Tajalli, P. Moens, Materials Science in Semiconductor Processing Gan-based Power HemtsElectrical EngineeringDynamic RonEngineeringHigh Voltage Engineering	2017	107
Reliability and failure analysis in power GaN-HEMTs: An overview Matteo Meneghini, Isabella Rossetto, Carlo De Santi, ReliabilityElectrical EngineeringEngineeringPower DeviceApplied Physics	2017	106
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs A. Stockman, E. Canato, Alaleh Tajalli, Wide-bandgap SemiconductorElectrical EngineeringTemperature Dependent DcEngineeringP-gate Algan/gan Hemts	2018	57
Vertical breakdown of GaN on Si due to V-pits Sven Besendörfer, Alaleh Tajalli, Matteo Meneghini, Journal of Applied Physics Atomic Force MicroscopyWide-bandgap SemiconductorElectrical EngineeringEngineeringElectron Microscopy	2020	29
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors A. Stockman, Alaleh Tajalli, Matteo Meneghini, IEEE Transactions on Electron Devices	2018	21
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Materials	2020	20
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors Alaleh Tajalli, E. Canato, A. Nardo, Microelectronics Reliability	2018	19
Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation Matteo Meneghini, Alaleh Tajalli, P. Moens, Electrical EngineeringEngineeringNuclear PhysicsPhysicsRadiation Detection	2017	17
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift Stefano Dalcanale, Matteo Meneghini, Alaleh Tajalli, Wide-bandgap SemiconductorElectrical EngineeringNbti ShiftEngineeringSemiconductor Device	2017	15

Page 1