Sven Besendörfer

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Sven Besendörfer, Farid Medjdoub, Joff Derluyn et al. · Scientific Reports · 2020 · 52 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Sven Besendörfer, A. G. Lesnik, Jochen Friedrich et al. · Journal of Applied Physics · 2019 · 48 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Vertical breakdown of GaN on Si due to V-pits

Sven Besendörfer, Alaleh Tajalli, Matteo Meneghini et al. · Journal of Applied Physics · 2020 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Sven Besendörfer, Thorsten Zweipfennig, Hady Yacoub et al. · AIP Advances · 2020 · 26 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer et al. · Materials · 2020 · 21 citations · Full text

Engineering, Electrical Engineering, Materials Science +17