Sven Besendörfer

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Sven Besendörfer, Farid Medjdoub, Joff Derluyn et al. · Scientific Reports · 2020 · 50 citations · Full text

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Sven Besendörfer, A. G. Lesnik, Jochen Friedrich et al. · Journal of Applied Physics · 2019 · 48 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Vertical breakdown of GaN on Si due to V-pits

Sven Besendörfer, Alaleh Tajalli, Matteo Meneghini et al. · Journal of Applied Physics · 2020 · 29 citations · Full text

Atomic Force Microscopy, Wide-bandgap Semiconductor, Electrical Engineering +11

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Sven Besendörfer, Thorsten Zweipfennig, Hady Yacoub et al. · AIP Advances · 2020 · 23 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +12

Growth and Intercalation of Graphene on Silicon Carbide Studied by Low‐Energy Electron Microscopy

Florian Speck, Markus Ostler, Sven Besendörfer et al. · Annalen der Physik · 2017 · 20 citations

Materials Science, Low‐energy Electron Microscopy, Graphene Nanomeshes +12