A. G. Lesnik

Two charge states of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math> acceptor in GaN: Evidence from photoluminescence

M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko et al. · Physical review. B./Physical review. B · 2018 · 119 citations

Carbon Impurity, Charge States, Electrical Engineering +15

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Sven Besendörfer, A. G. Lesnik, Jochen Friedrich et al. · Journal of Applied Physics · 2019 · 48 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Properties of C‐doped GaN

A. G. Lesnik, Marc P. Hoffmann, Aqdas Fariza et al. · physica status solidi (b) · 2016 · 41 citations

Semiconductors, C‐doped Gan, Electrical Engineering +11

Twin domain imaging in topological insulator Bi₂Te₃ and Bi₂Se₃ epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction

Dominik Kriegner, Petr Harcuba, Jozef Veselý et al. · Journal of Applied Crystallography · 2017 · 34 citations · Full text

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Aqdas Fariza, A. G. Lesnik, Silvio Neugebauer et al. · Journal of Applied Physics · 2017 · 30 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14