A. G. Lesnik - Concepedia

Author

A. G. Lesnik

Otto-von-Guericke University Magdeburg ORCID

Also Known As

A Lesnik, A. G. Lesnik, A. Lesnik, Andreas Lesnik

Publications

386

Citations

H-Index

Concepts

All Affiliations

Otto-von-Guericke University Magdeburg

About

A. G. Lesnik is an author at Otto-von-Guericke University Magdeburg specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	315
2	Applied Physics	8	8	315
3	Electrical Engineering	7	7	304
4	Materials Science	3	3	70
5	Natural Sciences	1	1	11

A. G. Lesnik

Publications

349

Citations

H-Index

Page 1

	Year	Citations
Two charge states of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math> acceptor in GaN: Evidence from photoluminescence M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko, Physical review. B./Physical review. B Carbon ImpurityCharge StatesElectrical EngineeringMath XmlnsMi Mathvariant=	2018	119
Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices Sven Besendörfer, A. G. Lesnik, Jochen Friedrich, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringConductive AfmEngineering	2019	48
Properties of C‐doped GaN A. G. Lesnik, Marc P. Hoffmann, Aqdas Fariza, physica status solidi (b) SemiconductorsC‐doped GanElectrical EngineeringElectronic DevicesEngineering	2016	41
Twin domain imaging in topological insulator Bi<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub> epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction Dominik Kriegner, Petr Harcuba, Jozef Veselý, Journal of Applied Crystallography	2017	34
Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping Aqdas Fariza, A. G. Lesnik, Silvio Neugebauer, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2017	30
On reduction of current leakage in GaN by carbon-doping Aqdas Fariza, A. G. Lesnik, J. Bläsing, Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2016	29
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality Christoph Berger, A. Dadgar, J. Bläsing, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringOptical PropertiesImproved Interface Quality	2014	26
On One of the Possible Mechanisms of Formation of Induced Anisotropy in Ferromagnetic Films A. G. Lesnik physica status solidi (b) Ferromagnetic FilmsEngineeringMagnetic ResonanceMagnetoresistanceMagnetism	1969	11
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Christoph Berger, A. G. Lesnik, Thomas Zettler, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringOptical Properties	2016	11

Page 1