Thorsten Zweipfennig

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 32 citations

Wide-bandgap Semiconductor, Engineering, Dynamic Properties +16

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Sven Besendörfer, Thorsten Zweipfennig, Hady Yacoub et al. · AIP Advances · 2020 · 23 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +12

Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

Carsten Beckmann, Zineng Yang, Jens Wieben et al. · IEEE Journal of the Electron Devices Society · 2023 · 18 citations · Full text

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

C. Mauder, H. Hahn, M Marx et al. · Semiconductor Science and Technology · 2021 · 13 citations