Karen Geens

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

M. Van Hove, S. Boulay, S.R. Bahl et al. · IEEE Electron Device Letters · 2012 · 206 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Xiangdong Li, M. Van Hove, Ming Zhao et al. · IEEE Electron Device Letters · 2017 · 150 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Puneet Srivastava, J. Das, Domenica Visalli et al. · IEEE Electron Device Letters · 2010 · 104 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Kai Cheng, Hu Liang, M. Van Hove et al. · Applied Physics Express · 2011 · 99 citations · Full text

Wide-bandgap Semiconductor, Mm Silicon, Electron Density +10