J. Das

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Puneet Srivastava, J. Das, Domenica Visalli et al. · IEEE Electron Device Letters · 2010 · 104 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

Effects of momentary voltage dips on the operation of induction and synchronous motors

J. Das · 2003 · 88 citations

Electrical Engineering, Electric Machine, Engineering +11

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Denis Marcon, T. Kauerauf, Farid Medjdoub et al. · 2010 · 86 citations

Electrical Engineering, Gate Degradation, Engineering +14

Effects of momentary voltage dips on the operation of induction and synchronous motors

J. Das · IEEE Transactions on Industry Applications · 1990 · 80 citations

Electrical Engineering, Voltage Dip, Engineering +10

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

J. Das, Herman Oprins, Hangfeng Ji et al. · IEEE Transactions on Electron Devices · 2006 · 75 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +18