T. Kauerauf

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 357 citations

Device Modeling, Electrical Engineering, Engineering +13

Low Weibull slope of breakdown distributions in high-k layers

T. Kauerauf, R. Degraeve, E. Cartier et al. · IEEE Electron Device Letters · 2002 · 93 citations

Engineering, Low Weibull Slope, Semiconductor Device +17

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

Moonju Cho, Jae-Duk Lee, M. Aoulaiche et al. · IEEE Transactions on Electron Devices · 2012 · 88 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Moonju Cho, Philippe Roussel, B. Kaczer et al. · IEEE Transactions on Electron Devices · 2013 · 88 citations

Device Modeling, Hot Carrier Injection, Electrical Engineering +12

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Denis Marcon, T. Kauerauf, Farid Medjdoub et al. · 2010 · 86 citations

Electrical Engineering, Gate Degradation, Engineering +14