M. Aoulaiche

NBTI from the perspective of defect states with widely distributed time scales

B. Kaczer, Tibor Grasser, J. Martín-Martínez et al. · IEEE International Reliability Physics Symposium proceedings · 2009 · 105 citations

Engineering, Defect Tolerance, Defect Times +18

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

Moonju Cho, Jae-Duk Lee, M. Aoulaiche et al. · IEEE Transactions on Electron Devices · 2012 · 88 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Moonju Cho, Philippe Roussel, B. Kaczer et al. · IEEE Transactions on Electron Devices · 2013 · 88 citations

Device Modeling, Hot Carrier Injection, Electrical Engineering +12

Reaction-dispersive proton transport model for negative bias temperature instabilities

Michel Houssa, M. Aoulaiche, Stefan De Gendt et al. · Applied Physics Letters · 2005 · 64 citations

Device Modeling, Electrical Engineering, Engineering +15

Review of reliability issues in high-k/metal gate stacks

R. Degraeve, M. Aoulaiche, B. Kaczer et al. · 2008 · 64 citations

Reliability, Reliability Issues, Electrical Engineering +11