Stefan De Gendt

Bandgap opening in oxygen plasma-treated graphene

Amirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch et al. · Nanotechnology · 2010 · 330 citations

Materials Science, Graphene Nanomeshes, Graphene Quantum Dot +10

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson et al. · Materials Science and Engineering R Reports · 2006 · 274 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Hiroshi Nohira, Wei‐Bor Tsai, W.F.A. Besling et al. · Journal of Non-Crystalline Solids · 2002 · 249 citations

Materials Science, Materials Engineering, Aluminium Nitride +7

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · IEEE Electron Device Letters · 2008 · 185 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Zhen Xu, Michel Houssa, Stefan De Gendt et al. · Applied Physics Letters · 2002 · 176 citations

Electrical Engineering, Semiconductor Device, Engineering +14