L.-Å. Ragnarsson

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson et al. · Materials Science and Engineering R Reports · 2006 · 274 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 195 citations

Engineering, Vlsi Design, Silicon On Insulator +16

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

L.-Å. Ragnarsson, Supratik Guha, M. Copel et al. · Applied Physics Letters · 2001 · 83 citations

Materials Science, Semiconductors, Electrical Engineering +14

Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stress

R. Degraeve, T. Kauerauf, M. Cho et al. · 2006 · 63 citations

Engineering, Nuclear Physics, Charge Transport +19

Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs

Moonju Cho, M. Aoulaiche, R. Degraeve et al. · 2010 · 32 citations

Interface Degradation, Wide-bandgap Semiconductor, Electrical Engineering +13