M. Copel - Concepedia

Author

M. Copel

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

Copel, M., Li-Chyong Chen, M Copel, M. C. Copel, M. Copel, Mathew Copel, Matt Copel, Matthew Copel

271

Publications

11.6K

Citations

H-Index

112

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)University of Pennsylvania

About

M. Copel is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	55	124	11.2K
2	Applied Physics	55	119	11K
3	Natural Sciences	19	20	1.4K
4	Chemical Engineering	7	7	455
5	Social Sciences	1	1	154

M. Copel

128

Publications

11.3K

Citations

H-Index

Page 1

	Year	Citations
Surfactants in epitaxial growth M. Copel, M. C. Reuter, Efthimios Kaxiras, Physical Review Letters Materials ScienceEpitaxial GrowthEngineeringSurface ChemistryNanotechnology	1989	1.1K
Structure and stability of ultrathin zirconium oxide layers on Si(001) M. Copel, M. Gribelyuk, Evgeni Gusev Applied Physics Letters Materials ScienceMaterials EngineeringOxide HeterostructuresEngineeringCrystalline Defects	2000	666
High-mobility ultrathin semiconducting films prepared by spin coating David B. Mitzi, Laura L. Kosbar, Conal E. Murray, Nature Materials ScienceSpintronicsEngineeringApplied PhysicsThin Films	2004	518
High-resolution depth profiling in ultrathin Al2O3 films on Si E. P. Gusev, M. Copel, E. Cartier, Applied Physics Letters Materials EngineeringMaterials ScienceUltrathin Al2o3 FilmsNuclear Resonance ProfilingEngineering	2000	412
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues E. P. Gusev, E. Cartier, D. A. Buchanan, Microelectronic Engineering Materials EngineeringMaterials ScienceEngineeringIntegration IssuesOxide Electronics	2001	385
Influence of surfactants in Ge and Si epitaxy on Si(001) M. Copel, M. C. Reuter, M. Horn von Hoegen, Physical review. B, Condensed matter Materials EngineeringMaterials ScienceEngineeringNanoelectronicsNanotechnology	1990	344
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications E. P. Gusev, C. Cabral, M. Copel, Microelectronic Engineering Materials ScienceElectrical EngineeringEpitaxial GrowthUltrathin Hfo2 FilmsEngineering	2003	307
Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface Richard Haight, Aaron R. Barkhouse, Oki Gunawan, Applied Physics Letters Materials ScienceIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringCztsse Band Gap	2011	276
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics Supratik Guha, E. Cartier, M. Gribelyuk, Applied Physics Letters EngineeringMicrostructural CharacteristicsSilicon On InsulatorSemiconductorsAtomic Beam Deposition	2000	238
Defect self-annihilation in surfactant-mediated epitaxial growth M. Horn‐von Hoegen, F. K. LeGoues, M. Copel, Physical Review Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsNanotechnology	1991	233

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