Puneet Srivastava

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Yuhao Zhang, Min Sun, Hiu Yung Wong et al. · IEEE Transactions on Electron Devices · 2015 · 159 citations

Electrical Engineering, Gan-on-si Vertical Diodes, Engineering +10

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Puneet Srivastava, J. Das, Domenica Visalli et al. · IEEE Electron Device Letters · 2010 · 104 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Kai Cheng, Hu Liang, M. Van Hove et al. · Applied Physics Express · 2011 · 99 citations · Full text

Wide-bandgap Semiconductor, Mm Silicon, Electron Density +10

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Denis Marcon, T. Kauerauf, Farid Medjdoub et al. · 2010 · 86 citations

Electrical Engineering, Gate Degradation, Engineering +14

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Domenica Visalli, M. Van Hove, Puneet Srivastava et al. · Applied Physics Letters · 2010 · 66 citations

Wide-bandgap Semiconductor, Electron Density, Electrical Engineering +15