Puneet Srivastava

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Yuhao Zhang, Min Sun, Hiu Yung Wong et al. · IEEE Transactions on Electron Devices · 2015 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Puneet Srivastava, J. Das, Domenica Visalli et al. · IEEE Electron Device Letters · 2010 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Kai Cheng, Hu Liang, M. Van Hove et al. · Applied Physics Express · 2011 · 100 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Denis Marcon, T. Kauerauf, Farid Medjdoub et al. · 2010 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Domenica Visalli, M. Van Hove, Puneet Srivastava et al. · Applied Physics Letters · 2010 · 66 citations

Engineering, Electrical Engineering, Materials Engineering +17