Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Abstract

The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate removal technique. High-voltage electrical measurements show that the breakdown voltage saturates for larger gate-drain distances. This failure mechanism is dominated by the avalanche breakdown in the Si substrate. High-voltage TCAD simulations of AlGaN/GaN/Si substrate structures show higher impact ionization factor and electron density at the Si interface indicating a leakage current path where avalanche breakdown occurs. Experimentally, by etching off the Si substrate the breakdown voltage no longer saturates and linearly increases for all gate-drain gaps. We propose the silicon removal technique as a viable way to enhance the breakdown voltage of AlGaN/GaN devices grown on Si substrate.