Maarten Leys

Improvement of AlGaN∕GaN high electron mobility transistor structures by <i>in situ</i> deposition of a Si3N4 surface layer

Joff Derluyn, Steven Boeykens, Kai Cheng et al. · Journal of Applied Physics · 2005 · 203 citations

Engineering, Materials Engineering, Materials Science +17

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Maarten Leys, Hendrik Veenvliet · Journal of Crystal Growth · 1981 · 170 citations

Engineering, Electrical Engineering, Materials Science +16

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Kai Cheng, Maarten Leys, Stefan Degroote et al. · Journal of Electronic Materials · 2006 · 129 citations

Engineering, Materials Engineering, Materials Science +16

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

Benny Van Daele, G. Van Tendeloo, Wouter Ruythooren et al. · Applied Physics Letters · 2005 · 121 citations

Engineering, Materials Engineering, Materials Science +17

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Farid Medjdoub, Joff Derluyn, Kai Cheng et al. · IEEE Electron Device Letters · 2010 · 121 citations

Engineering, Electrical Engineering, Materials Science +17