Steven Boeykens

Improvement of AlGaN∕GaN high electron mobility transistor structures by <i>in situ</i> deposition of a Si3N4 surface layer

Joff Derluyn, Steven Boeykens, Kai Cheng et al. · Journal of Applied Physics · 2005 · 201 citations

Materials Science, Si3n4 Surface Layer, Electrical Engineering +15

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Kai Cheng, Maarten Leys, Stefan Degroote et al. · Journal of Electronic Materials · 2006 · 128 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Effect of V/III ratio in AlN and AlGaN MOVPE

A.V. Lobanova, K. Mazaev, Maarten Leys et al. · Journal of Crystal Growth · 2005 · 83 citations

Materials Engineering, Aluminium Nitride, Algan Movpe +6

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Kai Cheng, Maarten Leys, Joff Derluyn et al. · Journal of Crystal Growth · 2006 · 53 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +7

Deep defects in GaN/AlGaN/SiC heterostructures

D. Kindl, J. Krištofik, Jiřı́ J. Mareš et al. · Journal of Applied Physics · 2009 · 28 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12