Stefan Degroote

Improvement of AlGaN∕GaN high electron mobility transistor structures by <i>in situ</i> deposition of a Si3N4 surface layer

Joff Derluyn, Steven Boeykens, Kai Cheng et al. · Journal of Applied Physics · 2005 · 201 citations

Materials Science, Si3n4 Surface Layer, Electrical Engineering +15

Ohmic contact formation on n-type Ge

Ruben Lieten, Stefan Degroote, Maarten Kuijk et al. · Applied Physics Letters · 2008 · 166 citations

Materials Science, Surface Characterization, Engineering +13

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Kai Cheng, Maarten Leys, Stefan Degroote et al. · Journal of Electronic Materials · 2006 · 128 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Farid Medjdoub, Joff Derluyn, Kai Cheng et al. · IEEE Electron Device Letters · 2010 · 121 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Domenica Visalli, M. Van Hove, Joff Derluyn et al. · Japanese Journal of Applied Physics · 2009 · 84 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11