Domenica Visalli

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Farid Medjdoub, Joff Derluyn, Kai Cheng et al. · IEEE Electron Device Letters · 2010 · 121 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Puneet Srivastava, J. Das, Domenica Visalli et al. · IEEE Electron Device Letters · 2010 · 104 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Domenica Visalli, M. Van Hove, Joff Derluyn et al. · Japanese Journal of Applied Physics · 2009 · 84 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Domenica Visalli, M. Van Hove, Puneet Srivastava et al. · Applied Physics Letters · 2010 · 66 citations

Wide-bandgap Semiconductor, Electron Density, Electrical Engineering +15

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

J. Das, Jordi Everts, Jeroen Van den Keybus et al. · IEEE Electron Device Letters · 2011 · 59 citations · Full text

Wide-bandgap Semiconductor, Converter Efficiency, Electrical Engineering +11