Benny Van Daele

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Kai Cheng, Maarten Leys, Stefan Degroote et al. · Journal of Electronic Materials · 2006 · 128 citations

Materials Engineering, Materials Science, Electrical Engineering +7

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

Benny Van Daele, G. Van Tendeloo, Wouter Ruythooren et al. · Applied Physics Letters · 2005 · 119 citations

Materials Science, Materials Engineering, Metallization Scheme +13

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures

Z. Bougrioua, Ingrid Moerman, Lavinia Nistor et al. · physica status solidi (a) · 2003 · 67 citations

Materials Engineering, Semiconductors, Electrical Engineering +15

Formation of metallic In in InGaN∕GaN multiquantum wells

Benny Van Daele, Gustaaf Van Tendeloo, K. Jacobs et al. · Applied Physics Letters · 2004 · 52 citations

Wide-bandgap Semiconductor, Engineering, Microstructural Changes +16

Formation of germanium shallow junction by flash annealing

A. Satta, A. D’Amore, Eddy Simoen et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2007 · 33 citations

Engineering, Physics, Germanium Shallow Junction +5